Research trend of programmable metalization cell (PMC) memory device

Logic-in-Memory (LiM) with a Non-Volatile Programmable Metallization Cell (PMC)

This paper introduces two new cells for Logic-inMemory (LiM) operation. The first novelty of these cells is the resistive RAM configuration that utilizes a Programmable Metallization Cell (PMC) as non-volatile element. CMOS transistors and ambipolar transistors are used as processing and control elements for the logic operations of the LiM cells. The first cell employs ambipolar transistors and...

Programmable polymer thin film and non-volatile memory device.

Building on the success of organic electronic devices, such as light-emitting diodes and field-effect transistors, procedures for fabricating non-volatile organic memory devices are now being explored. Here, we demonstrate a novel organic memory device fabricated by solution processing. Programmable electrical bistability was observed in a device made from a polystyrene film containing gold nan...

Trend of Memory Recovery after Benzodiazepine Overdose

Because of difference in the toxicokinetic and pharmacokinetic characteristics of drugs and with respect to the high rate of benzodiazepine abuse in suicidal attempts, the trend of possible anterograde amnesia after recovery from benzodiazepine overdose were evaluated in Iranian patients. This was a prospective descriptive/analytic clinical trial, which was conducted, in Noor general teaching h...

Integratable Programmable Capacitive Device

Diffusion Programmable Device : The device to prevent reverse engineering

The secret information, which is embedded in integrated circuit (IC) devices such as a smart card, has the risk of theft by reverse engineering (RE). The circuit design of IC can be stolen by the RE, and the counterfeit can be illegally fabricated. Therefore, the secure IC device requires the circuit architecture protected from the RE attacks. This paper proposes the diffusion programmable devi...